Use of the log-normal probability density function to analyze membrane pore size distributions: functional forms and discrepancies

AL Zydney, P Aimar, M Meireles, JM Pimbley… - Journal of Membrane …, 1994 - Elsevier
The log-normal probability density function has been used extensively in the characterization
of membrane pore size distributions and in the theoretical analysis of the effect of these …

Silicon carbide UV photodiodes

…, YS Liu, JA Edmond, G Gati, JM Pimbley… - … on Electron Devices, 1993 - ieeexplore.ieee.org
SiC photodiodes were fabricated using 6 H single-crystal wafers. These devices have excellent
UV responsivity characteristics and very low dark current even at elevated temperatures. …

Diagnosis of membrane fouling using a rotating annular filter. 1. Cell culture media

G Belfort, JM Pimbley, A Greiner, KY Chung - Journal of Membrane Science, 1993 - Elsevier
Membrane fouling is dissected into pore narrowing and constriction, pore plugging and
deposition of a gel/cake onto the upstream face of a membrane. Using a rotating annular …

Diagnosis of membrane fouling using a rotating annular filter. 2. Dilute particle suspensions of known particle size

G Belfort, P Mikulasek, JM Pimbley… - Journal of membrane …, 1993 - Elsevier
In a continuing study of membrane fouling, we report on the behavior of dilute particle
suspensions in a rotating annular filter with a nominal 0.45 μm surface modified polysulfone …

MOSFET scaling limits determined by subthreshold conduction

JM Pimbley, JD Meindl - IEEE transactions on electron devices, 1989 - ieeexplore.ieee.org
Pimbley is with the Department of Mathematical Sciences, Rensselaer Polytechnic Institute,
Troy, NY 12180-3590. J. D. … M. Pimbley, “Dual level transmission line model for current flow …

Trends in advanced process technology—Submicrometer CMOS device design and process requirements

DM Brown, M Ghezzo, JM Pimbley - Proceedings of the IEEE, 1986 - ieeexplore.ieee.org
Some of the trends in integrated circuit process development are described. The motivations
or technical reasons for this activity are discussed. This effort will continue to develop the …

Short channel models and scaling limits of SOI and bulk MOSFETs

B Agrawal, VK De, JM Pimbley… - IEEE Journal of Solid …, 1994 - ieeexplore.ieee.org
Analytical device-physics-based models for subthreshold drain current in short channel SOI
MOSFETs facilitate accurate and efficient circuit simulation. These models also enable …

Dual-level transmission line model for current flow in metal-semiconductor contacts

JM Pimbley - IEEE transactions on electron devices, 1986 - ieeexplore.ieee.org
Parasitic resistance in the metal-oxide-semiconductor field-effect transistor becomes increasingly
important as design rules shrink. The majority of this resistance arises from the contact …

Physicists in finance

JM Pimbley - Physics Today, 1997 - pubs.aip.org
To a physicist facing significant difficulty in the job market, the allure of a career in finance is
obvious: The industry has numerous opportunities that demand the physicist's quantitative …

Recursive autoregressive spectral estimation by minimization of the free energy

JM Pimbley - IEEE Transactions on signal processing, 1992 - ieeexplore.ieee.org
A digital signal processing technique applicable to power spectrum estimation, designated
as the minimum free energy method, is described. With no a priori model assumption and no …