Development and microstructural characterization of high‐thermal‐conductivity aluminum nitride ceramics
…, K Utsumi, H Takamizawa - Journal of the American …, 1988 - Wiley Online Library
… The mixtures were hot-pressed in graphite dies lined with BN powder at 1800C under 100
kg/cm2 pressure in 1 atm of NZ gas for 2 h. The temperature dependence of shrinkage was …
kg/cm2 pressure in 1 atm of NZ gas for 2 h. The temperature dependence of shrinkage was …
Integration and transcription of human papillomavirus type 16 and 18 sequences in cell lines derived from cervical carcinomas
…, Y Tomita, S Sekiya, H Takamizawa… - Journal of general …, 1987 - microbiologyresearch.org
… The complete genome of HPV 16 was found in QG-H cells by digestion of the DNA with a …
In SKG-II, SKG-IIIb and QG-H cells we also detected c-myc and c-Ha-ras mRNA expression …
In SKG-II, SKG-IIIb and QG-H cells we also detected c-myc and c-Ha-ras mRNA expression …
Dopant distributions in n-MOSFET structure observed by atom probe tomography
K Inoue, F Yano, A Nishida, H Takamizawa… - Ultramicroscopy, 2009 - Elsevier
The dopant distributions in an n-type metal-oxide-semiconductor field effect transistor (MOSFET)
structure were analyzed by atom probe tomography. The dopant distributions of As, P, …
structure were analyzed by atom probe tomography. The dopant distributions of As, P, …
A1N substrates with high thermal conductivity
Y Kurokawa, K Utsumi, H Takamizawa… - IEEE Transactions …, 1985 - ieeexplore.ieee.org
… The normal dntering was carried out at 1800C for 2 h in 1 atm Nz. ‘The normal sintering
technique has the advantage that a fairly and complicated product can be made at 10,w cost. …
technique has the advantage that a fairly and complicated product can be made at 10,w cost. …
Dopant distribution in gate electrode of n-and p-type metal-oxide-semiconductor field effect transistor by laser-assisted atom probe
K Inoue, F Yano, A Nishida, H Takamizawa… - Applied Physics …, 2009 - pubs.aip.org
Three dimensional dopant distributions in polycrystalline Si gate of n-type (n-) and p-type (p-)
metal-oxide-semiconductor field effect transistor (MOSFET) structure were investigated by …
metal-oxide-semiconductor field effect transistor (MOSFET) structure were investigated by …
Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method
… space (1/6-em)] 50 solution of HF in H 2 O. After rinsing in deionized water and N 2 blow drying,
… They were kept for 3 h in the solution at a temperature of 100 ░C, then the samples were …
… They were kept for 3 h in the solution at a temperature of 100 ░C, then the samples were …
Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging
H Takamizawa, Y Shimizu, K Inoue, T Toyama… - Applied Physics …, 2011 - pubs.aip.org
The greater variability in the electrical properties of n-type metal-oxide-semiconductor field-effect
transistors (MOSFETs) compared with those of p-type MOSFETs poses problems for …
transistors (MOSFETs) compared with those of p-type MOSFETs poses problems for …
Re‐evaluation of the true rate of hepatitis C virus mother‐to‐child transmission and its novel risk factors based on our two prospective studies
…, H Watanabe, H Takamizawa - Journal of Obstetrics …, 2007 - Wiley Online Library
Objective: To re‐evaluate the true hepatitis C virus (HCV) mother‐to‐child transmission (MTCT)
rate and its novel risk factors. Study Design: A comparative study based on our own two …
rate and its novel risk factors. Study Design: A comparative study based on our own two …
A highly stabilized low-noise GaAs FET integrated oscillator with a dielectric resonator in the C band
…, A Higashisaka, H Takamizawa - IEEE Transactions on …, 1978 - ieeexplore.ieee.org
A GaAs FET integrated oscillator stabilized with a BaO--TiO/sub 2/ system ceramic dielectric
resonator provides a high-frequency-stabilized low-noise compact microwave power source…
resonator provides a high-frequency-stabilized low-noise compact microwave power source…
Grain-boundary phosphorus segregation in highly neutron-irradiated reactor pressure vessel steels and its effect on irradiation embrittlement
K Hata, H Takamizawa, T Hojo, K Ebihara… - Journal of Nuclear …, 2021 - Elsevier
Reactor pressure vessel (RPV) steels for pressurized water reactors (PWRs) with bulk P
contents ranging from 0.007 to 0.012wt.% were subjected to neutron irradiation at fluences …
contents ranging from 0.007 to 0.012wt.% were subjected to neutron irradiation at fluences …